---
title: "Assembly platform"
canonical_url: "https://www.smoltek.com/assembly-platform/1038/"
date: 2017-05-03
author: "Fredrik Liljeberg"
featured_image: "https://www.smoltek.com/wp-content/uploads/2017/05/us10840203pdf.png"
categories:
  - name: "Patents"
    url: "https://www.smoltek.com/category/patents.md"
tags:
  - name: "grantedpatent"
    url: "https://www.smoltek.com/topic/grantedpatent.md"
  - name: "heterogenousintegration"
    url: "https://www.smoltek.com/topic/heterogenousintegration.md"
  - name: "innovation"
    url: "https://www.smoltek.com/topic/innovation.md"
  - name: "nanotechnology"
    url: "https://www.smoltek.com/topic/nanotechnology.md"
  - name: "semiconductor"
    url: "https://www.smoltek.com/topic/semiconductor.md"
---

# Assembly platform

The inven­tion: An assem­bly plat­form for arrange­ment as an inter­pos­er device between an inte­grat­ed cir­cuit and a sub­strate to inter­con­nect the inte­grat­ed cir­cuit and the sub­strate through the assem­bly plat­form, the assem­bly plat­form com­pris­ing: an assem­bly sub­strate; a plu­ral­i­ty of con­duct­ing vias extend­ing through the assem­bly sub­strate; at least one nanos­truc­ture con­nec­tion bump on a first side of the assem­bly sub­strate, the nanos­truc­ture con­nec­tion bump being con­duc­tive­ly con­nect­ed to the vias and defin­ing con­nec­tion loca­tions for con­nec­tion with at least one of the inte­grat­ed cir­cuit and the sub­strate, where­in each of the nanos­truc­ture con­nec­tion bumps com­pris­es: a plu­ral­i­ty of elon­gat­ed con­duc­tive nanos­truc­tures ver­ti­cal­ly grown on the first side of the assem­bly sub­strate, where­in the plu­ral­i­ty of elon­gat­ed nanos­truc­tures are embed­ded in a met­al for the con­nec­tion with at least one of the inte­grat­ed cir­cuit and the sub­strate, at least one con­nec­tion bump on a sec­ond side of the assem­bly sub­strate, the sec­ond side being oppo­site to the first side, the con­nec­tion bump being con­duc­tive­ly con­nect­ed to the vias and defin­ing con­nec­tion loca­tions for con­nec­tion with at least one of the inte­grat­ed cir­cuit and the substrate.

[Down­load the patent grant­ed by USPTO.](https://www.smoltek.com/wp-content/uploads/2021/11/us10840203.pdf)

## [](https://www.smoltek.com#granted-patents-relating-to-the-innovation)Granted patents relating to the innovation

| Patent Office | Patent                                                        |
|---------------|---------------------------------------------------------------|
| Japan         | [JP6864009](https://patents.google.com/patent/JP6864009/en)   |
| Tai­wan       | [TWI743119](https://patents.google.com/patent/TWI743119/en)   |
| USA           | [US10840203](https://patents.google.com/patent/US10840203/en) |
| USA           | 11348890                                                      |
| Korea         | 10–2403468                                                    |
| Chi­na        | CN109075152                                                   |
| India         | 442641                                                        |

For more infor­ma­tion about a par­tic­u­lar patent, click on its name to view it on Google Patents.