CNF-MIM capacitor technology offers the smallest form factor in the world

Disruptive capacitor technology

Smoltek's CNF-MIM capacitor technology is a revolutionizing way of making high performance capacitors with an extremely small footprint (2D) and with an extremely thin profile (z-axis) that free up lot's of space.

Smoltek CNF-MIM provides significantly enhanced performance of a traditional MIM capacitor technology. Smoltek CNF-MIM take the advantage of the 3D surface area created by vertically grown carbon nanofiber (CNF). This makes the scaling of capacitors with a very high capacitance density possible. The capacitors can be manufactured in both CMOS and non-CMOS production platforms.


The CNF-MIM capacitor technology platform enables production of several different types of capacitor components, including discrete passives, embedded capacitors and capacitors directly integrated on the chip. 


The CNF-MIM technology platform renders in a much smaller 3D form factor that free ups valuable real-estate space on the silicon and/or on the PCB. This allows CNF-MIM capacitor to enable additional features in the silicon and/or on the PCB board.


If used as a discrete component, the CNF-MIM will have a much smaller and lower form factor than a MLCC or TSC components. By integrating the CNF-MIM capacitor directly on the chip exactly where needed one may enhance the performance of the intended circuit unit and free up valuable real-estate space on both silicon and on the PCB/motherboard. This enables to free up valuable real state space to add new functionality and allow room for lowering the cost of the system. 

Thinnest capacitor technology in the world

Smoltek has developed a prototype of the world's thinnest capacitor. Together with the necessary substrate (component carrier) the CNF-MIM capacitor barely reaches 40 micrometers in total height. It has a capacitance density of 500nF/mm2 (nanofarad per square millimeter), an equivalent series resistance below 10 mΩ (milliohm) and an internal inductance below 15 pH (picohenry).

Smoltek offer two types of CNF-MIM capacitors: discrete or integrated
CNF-MIM as a discrete component  

CNF-MIM as a discrete component has a much smaller form factor – smaller area and thinner profile than MLCC and TSC devices and can easily replace these old architectures as a discrete passive component. As a discrete component CNF-MIM can be mounted on the PCB, embedded in PCB, on interposer or on chip die and thus making it suitable for different 3D and 2.5D packaging. 

Features includes
  • Solid-state component 

  • Component system profile height: ~30 µm (CNF-MIM device height: 4 µm)

  • Capacitance density: >650 nF/mm2

  • Breakdown voltage, based on design: up to ~25 V

  • ESR: <40 mΩ

  • Leakage current: ~0.004 A/F

  • Excellent capacitance stability up to 150°C

  • Vary the form factors according to the design and need

  • Stable and robust performance against temperature and applied voltage

  • Extremely low-profile high performance capacitor

  • Compatible with wafer to wafer or die to wafer bonding

Applications for implementation
  • Suitable for attaching underneath the App processor/µ-processor

  • Suitable for embedding with other chips in SoC/SiP

  • Suitable for embedding in PCB/SLP

CNF-MIM as an integrated capacitor

Smoltek’s CNF-MIM technology offers the future solution for fabrication of circuit integrated capacitors. This technology will dramatically enhance performance on a given area (and/or volume) compared to traditional MIM capacitors, or TSC alternatives. 


By utilizing fully CMOS compatible process technology, conditions and materials, the CNF-MIM concept is ideal for circuit integration. CNF-MIM capacitors may be built directly on devices such as silicon or glass interposers, as well as directly on active devices for applications including decoupling and filtering. 

Features includes
  • Solid-state construction 

  • Capacitor profile height: ~0.5-10 µm

  • Capacitance density: >650 nF/mm2 at ~5 µm

  • Breakdown voltage, based on design: up to ~25 V

  • ESR: <40 mΩ

  • Leakage current: ~0.004 A/F

  • Excellent capacitance stability up to 150°C

  • CMOS-compatible manufacturing process

  • Stable and robust performance against temperature and applied voltage

  • Unparalleled design freedom for circuit designers

  • Possible to manufacture directly on chip

  • Closer to circuit where it is needed

  • Extremely small 2D footprint 

  • Very compact 3D volume

  • Eliminates the need for integrated discrete capacitor(s) 

Applications for implementation
  • CMOS-chip integration-ready

  • 3D stacking-ready

  • 2.5D interposer-ready