CNF-MIM capacitor technology offers the smallest form factor in the world

Disruptive capacitor technology

Smoltek's CNF-MIM capacitor technology is a revolutionizing way of making high performance capacitors with an extremely small footprint (2D) and with an extremely thin profile (z-axis) that free up lot's of space.

Smoltek CNF-MIM provides significantly enhanced performance of a traditional MIM capacitor technology. Smoltek CNF-MIM take the advantage of the 3D surface area created by vertically grown carbon nanofiber (CNF). This makes the scaling of capacitors with a very high capacitance density possible. The capacitors can be manufactured in both CMOS and non-CMOS production platforms.


The CNF-MIM capacitor technology platform enables production of several different types of capacitor components, including discrete passives, embedded capacitors and capacitors directly integrated on the chip. 


The CNF-MIM technology platform renders in a much smaller 3D form factor that free ups valuable real-estate space on the silicon and/or on the PCB. This allows CNF-MIM capacitor to enable additional features in the silicon and/or on the PCB board.


If used as a discrete component, the CNF-MIM will have a much smaller and lower form factor than a MLCC or TSC components. By integrating the CNF-MIM capacitor directly on the chip exactly where needed one may enhance the performance of the intended circuit unit and free up valuable real-estate space on both silicon and on the PCB/motherboard. This enables to free up valuable real state space to add new functionality and allow room for lowering the cost of the system. 

Smoltek offer two types of CNF-MIM capacitors: discrete or integrated
CNF-MIM as a discrete component  

CNF-MIM as a discrete component has a much smaller form factor – smaller area and thinner profile than MLCC and TSC devices and can easily replace these old architectures as a discrete passive component. As a discrete component CNF-MIM can be mounted on the PCB, embedded in PCB, on interposer or on chip die and thus making it suitable for different 3D and 2.5D packaging. 

Features includes
  • Solid-state component 

  • Component system profile height: ~30 µm (CNF-MIM device height: 4 µm)

  • Capacitance density: >650 nF/mm2

  • Breakdown voltage, based on design: up to ~25 V

  • ESR: <40 mΩ

  • Leakage current: ~0.004 A/F

  • Excellent capacitance stability up to 150°C

  • Vary the form factors according to the design and need

  • Stable and robust performance against temperature and applied voltage

  • Extremely low-profile high performance capacitor

  • Compatible with wafer to wafer or die to wafer bonding

Applications for implementation
  • Suitable for attaching underneath the App processor/µ-processor

  • Suitable for embedding with other chips in SoC/SiP

  • Suitable for embedding in PCB/SLP

CNF-MIM as an integrated capacitor

Smoltek’s CNF-MIM technology offers the future solution for fabrication of circuit integrated capacitors. This technology will dramatically enhance performance on a given area (and/or volume) compared to traditional MIM capacitors, or TSC alternatives. 


By utilizing fully CMOS compatible process technology, conditions and materials, the CNF-MIM concept is ideal for circuit integration. CNF-MIM capacitors may be built directly on devices such as silicon or glass interposers, as well as directly on active devices for applications including decoupling and filtering. 

Features includes
  • Solid-state construction 

  • Capacitor profile height: ~0.5-10 µm

  • Capacitance density: >650 nF/mm2 at ~5 µm

  • Breakdown voltage, based on design: up to ~25 V

  • ESR: <40 mΩ

  • Leakage current: ~0.004 A/F

  • Excellent capacitance stability up to 150°C

  • CMOS-compatible manufacturing process

  • Stable and robust performance against temperature and applied voltage

  • Unparalleled design freedom for circuit designers

  • Possible to manufacture directly on chip

  • Closer to circuit where it is needed

  • Extremely small 2D footprint 

  • Very compact 3D volume

  • Eliminates the need for integrated discrete capacitor(s) 

Applications for implementation
  • CMOS-chip integration-ready

  • 3D stacking-ready

  • 2.5D interposer-ready