---
title: "Discrete CNF-MIM"
canonical_url: "https://www.smoltek.com/discrete-cnf-mim/5689/"
date: 2023-06-13
author: "Fredrik Liljeberg"
featured_image: "https://www.smoltek.com/wp-content/uploads/2023/06/wo2020080993a1-web-patents-01-jpg.webp"
categories:
  - name: "Patents"
    url: "https://www.smoltek.com/category/patents.md"
tags:
  - name: "advanced packaging"
    url: "https://www.smoltek.com/topic/advanced-packaging.md"
  - name: "cnf-mim"
    url: "https://www.smoltek.com/topic/cnf-mim.md"
  - name: "Discrete capacitors"
    url: "https://www.smoltek.com/topic/discrete-capacitors.md"
  - name: "grantedpatent"
    url: "https://www.smoltek.com/topic/grantedpatent.md"
  - name: "heterogenousintegration"
    url: "https://www.smoltek.com/topic/heterogenousintegration.md"
  - name: "innovation"
    url: "https://www.smoltek.com/topic/innovation.md"
  - name: "nanotechnology"
    url: "https://www.smoltek.com/topic/nanotechnology.md"
---

# Discrete CNF-MIM

The inven­tion: A dis­crete two-ter­mi­nal met­al-insu­la­tor-met­al (MIM) capac­i­tor com­po­nent, the capac­i­tor com­po­nent com­pris­ing: a MIM-arrange­ment com­pris­ing: a first elec­trode lay­er; a plu­ral­i­ty of con­duc­tive nanos­truc­tures grown from the first elec­trode lay­er; a sol­id dielec­tric mate­r­i­al lay­er con­for­mal­ly coat­ing each nanos­truc­ture in the plu­ral­i­ty of con­duc­tive nanos­truc­tures and the first elec­trode lay­er uncov­ered by the con­duc­tive nanos­truc­tures; and a sec­ond elec­trode lay­er cov­er­ing the sol­id dielec­tric mate­r­i­al lay­er a first con­nect­ing struc­ture for exter­nal elec­tri­cal con­nec­tion of the capac­i­tor com­po­nent a sec­ond con­nect­ing struc­ture for exter­nal elec­tri­cal con­nec­tion of the capac­i­tor com­po­nent; and an elec­tri­cal­ly insu­lat­ing encap­su­la­tion mate­r­i­al at least part­ly embed­ding the MIM-arrangement.

[Down­load patent file: WO2020080993A1](https://www.smoltek.com/wp-content/uploads/2023/06/wo2020080993a1.pdf)

## [](https://www.smoltek.com#granted-patents-relating-to-the-innovation)Granted patents relating to the innovation

| Patent Office | Patent                                                             |
|---------------|--------------------------------------------------------------------|
| Chi­na        | [CN112823403B](https://patents.google.com/patent/CN112823403B/en)  |
| Tai­wan       | [I832909](https://patents.google.com/patent/TWI832909B/en)         |
| Japan         | [JP7430718](https://patents.google.com/patent/JP7430718B2/en)      |
| USA           | [US12033797](https://patents.google.com/patent/US20220013305A1/en) |
| India         | IN559520                                                           |
| Korea         | 10–2795481                                                         |

For more infor­ma­tion about a par­tic­u­lar patent, click on its name to view it on Google Patents.