---
title: "Multilayer Cap"
canonical_url: "https://www.smoltek.com/multilayer-cap/7656/"
date: 2024-08-01
author: "Fredrik Liljeberg"
featured_image: "https://www.smoltek.com/wp-content/uploads/2024/08/wo2021211038a1-multilayer-cap.webp"
categories:
  - name: "Patents"
    url: "https://www.smoltek.com/category/patents.md"
tags:
  - name: "advanced packaging"
    url: "https://www.smoltek.com/topic/advanced-packaging.md"
  - name: "capacitance density"
    url: "https://www.smoltek.com/topic/capacitance-density.md"
  - name: "cnf-mim"
    url: "https://www.smoltek.com/topic/cnf-mim.md"
  - name: "Discrete capacitors"
    url: "https://www.smoltek.com/topic/discrete-capacitors.md"
  - name: "grantedpatent"
    url: "https://www.smoltek.com/topic/grantedpatent.md"
  - name: "heterogenousintegration"
    url: "https://www.smoltek.com/topic/heterogenousintegration.md"
  - name: "innovation"
    url: "https://www.smoltek.com/topic/innovation.md"
  - name: "nanotechnology"
    url: "https://www.smoltek.com/topic/nanotechnology.md"
---

# Multilayer Cap

The inven­tion: A MIM ener­gy stor­age device com­pris­ing a bot­tom elec­trode; a plu­ral­i­ty of con­duc­tive ver­ti­cal nanos­truc­tures; con­for­mal­ly coat­ing a bot­tom con­duc­tive con­trol lay­er of each of the plu­ral­i­ty of con­duc­tive ver­ti­cal nanos­truc­tures; and a lay­ered stack of alter­nat­ing con­duc­tive con­trol lay­ers and elec­trode lay­ers con­for­mal­ly coat­ing the bot­tom con­duc­tive con­trol lay­er, the lay­ered stack includ­ing at least a first odd-num­bered elec­trode lay­er at the bot­tom of the lay­ered stack, a first odd-num­bered con­duc­tive con­trol lay­er direct­ly on the first odd-num­bered elec­trode lay­er, and a first even-num­bered elec­trode lay­er direct­ly on the first odd-num­bered con­duc­tive con­trol lay­er. Each even-num­bered elec­trode lay­er in the lay­ered stack is con­duc­tive­ly con­nect­ed to the bot­tom elec­trode; and each odd-num­bered elec­trode lay­er in the lay­ered stack is con­duc­tive­ly con­nect­ed to any oth­er odd-num­bered elec­trode lay­er in the lay­ered stack.

## [](https://www.smoltek.com#granted-patents-relating-to-the-innovation)Granted patents relating to the innovation

| Patent Office | Patent                                                                                  |
|---------------|-----------------------------------------------------------------------------------------|
| Chi­na        | [CN115428107B](https://patents.google.com/patent/CN115428107B/en?oq=CN%20115428107%20B) |
| USA           | US12183520                                                                              |
| Tai­wan       | I900555                                                                                 |

For more infor­ma­tion about a par­tic­u­lar patent, click on its name to view it on Google Patents.