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The Carbon Nanofiber Solution

Stan­dard Mul­ti­lay­er Ceram­ic Capac­i­tors (MLCCs), long the indus­try work­horse, have reached their fun­da­men­tal minia­tur­iza­tion lim­its, falling short of the demands for next-gen­er­a­tion elec­tron­ics. Deep Trench Capac­i­tors (DTCs) emerged as an alter­na­tive, fab­ri­cat­ed using a sub­trac­tive process – etch­ing deep, nar­row trench­es into sil­i­con wafers, which are then filled with com­plex lay­ers of met­al and insu­lat­ing materials.

How­ev­er, this sub­trac­tive approach faces inher­ent phys­i­cal bar­ri­ers. Uni­form­ly coat­ing these extreme­ly deep and nar­row trench­es becomes pro­gres­sive­ly dif­fi­cult and cost­ly, akin to try­ing to paint the inside of a very long, thin straw. These man­u­fac­tur­ing com­plex­i­ties make DTCs pro­hib­i­tive­ly expen­sive for many appli­ca­tions and lim­it their future scal­a­bil­i­ty, rep­re­sent­ing a tech­no­log­i­cal dead end.

Smoltek’s CNF-MIM tech­nol­o­gy rep­re­sents a par­a­digm shift, mov­ing from the microm­e­ter-scale chal­lenges of con­ven­tion­al meth­ods to pre­ci­sion engi­neer­ing at the nanome­ter scale. Instead of carv­ing mate­r­i­al away, we employ a fun­da­men­tal­ly dif­fer­ent addi­tive man­u­fac­tur­ing process.

We pre­cise­ly grow dense arrays of ver­ti­cal­ly aligned car­bon nanofibers (CNFs) – typ­i­cal­ly tens of nanome­ters in diam­e­ter but microm­e­ters tall – direct­ly onto the sub­strate. Each fiber acts as a scaf­fold for the sub­se­quent con­for­mal coat­ing of a Met­al-Insu­la­tor-Met­al (MIM) stack. The cru­cial advan­tage lies in the geom­e­try: the com­bined sur­face area pro­vid­ed by this dense ”for­est” of nanoscale fibers increas­es the effec­tive sur­face area by up to 100× com­pared to the flat foot­print they occu­py. This mas­sive­ly mul­ti­plies the effec­tive elec­trode sur­face area, enabling dra­mat­i­cal­ly high­er capac­i­tance with­in an ultra-thin profile.

Crit­i­cal­ly, this addi­tive nano-scaf­fold­ing approach sig­nif­i­cant­ly sim­pli­fies the man­u­fac­tur­ing process com­pared to the com­plex mul­ti-step etch­ing and fill­ing required for DTCs. Notably, our process neces­si­tates few­er cycles of expen­sive and time-con­sum­ing Atom­ic Lay­er Depo­si­tion (ALD) – typ­i­cal­ly just one ALD step com­pared to the three or four often need­ed for DTCs. This inher­ent process effi­cien­cy is expect­ed to sig­nif­i­cant­ly reduce front-end pro­duc­tion costs com­pared to DTC tech­nol­o­gy, offer­ing a com­pelling eco­nom­ic advan­tage along­side supe­ri­or per­for­mance potential.