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The Discrete CNF-MIM patent family is covering a method for manufacturing of discrete capacitor components based on our CNF-MIM technology. The innovation exploits the extra-ordinary surface to volume ratio provided by carbon nanofibers to create a MIM capacitor with unparalleled high capacitance density.
S Kabir, A Johansson, A M Saleem, R Andersson, V Desmaris, Fredrik Liljeberg, O Tiverman • June 13, 2023
The invenÂtion: A disÂcrete two-terÂmiÂnal metÂal-insuÂlaÂtor-metÂal (MIM) capacÂiÂtor comÂpoÂnent, the capacÂiÂtor comÂpoÂnent comÂprisÂing: a MIM-arrangeÂment comÂprisÂing: a first elecÂtrode layÂer; a pluÂralÂiÂty of conÂducÂtive nanosÂtrucÂtures grown from the first elecÂtrode layÂer; a solÂid dielecÂtric mateÂrÂiÂal layÂer conÂforÂmalÂly coatÂing each nanosÂtrucÂture in the pluÂralÂiÂty of conÂducÂtive nanosÂtrucÂtures and the first elecÂtrode layÂer uncovÂered by the conÂducÂtive nanosÂtrucÂtures; and a secÂond elecÂtrode layÂer covÂerÂing the solÂid dielecÂtric mateÂrÂiÂal layÂer a first conÂnectÂing strucÂture for exterÂnal elecÂtriÂcal conÂnecÂtion of the capacÂiÂtor comÂpoÂnent a secÂond conÂnectÂing strucÂture for exterÂnal elecÂtriÂcal conÂnecÂtion of the capacÂiÂtor comÂpoÂnent; and an elecÂtriÂcalÂly insuÂlatÂing encapÂsuÂlaÂtion mateÂrÂiÂal at least partÂly embedÂding the MIM-arrangement.
Patent Office | Patent |
---|---|
ChiÂna | CN112823403B |
TaiÂwan | I832909 |
Japan | JP7430718 |
USA | US12033797 |
India | IN559520 |
Korea | 10–2795481 |
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