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Fully Solid-State Integrated Capacitors Based on Carbon Nanofibers and Dielectrics with Specific Capacitances Higher Than 200 nF/​mm2

Research paper pub­lished in the pro­ceed­ings of 2019 IEEE 69th Elec­tron­ic Com­po­nents and Tech­nol­o­gy Con­fer­ence (ECTC), 2019, pp. 1870–1876.

Com­plete on-chip ful­ly sol­id-state 3D inte­grat­ed capac­i­tors using ver­ti­cal­ly aligned car­bon nanofibers as elec­trodes to pro­vide a large 3D sur­face in a MIM con­fig­u­ra­tion have been man­u­fac­tured and char­ac­ter­ized in terms of capac­i­tance per device foot­print area, equiv­a­lent series resis­tance (ESR), break­down volt­age and leak­age cur­rent. The entire man­u­fac­tur­ing process of the capac­i­tors is com­plete­ly CMOS com­pat­i­ble, which along with the low device pro­file of about 4 μm makes the devices read­i­ly avail­able for inte­gra­tion on a CMOS-chip, in 3D stack­ing, or redis­tri­b­u­tion lay­ers in a 2.5D inter­pos­er tech­nol­o­gy. Capac­i­tances of 200 nF/​mm2 , ESR of about 100 mΩ, break­down volt­ages of 25 V and leak­age cur­rent of the order of 0.004 A/​F have been measured.

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