Granted patents relating to the innovation
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Smoltek has developed the world’s thinnest discrete capacitor. Its total building height is less than thirty micrometers (30 µm). You have to stack ten of them on top of each other to reach the same height as today’s industry-standard when it comes to surface-mounted capacitors. The capacitor itself, without encapsulation, is a mere 0.5 to 10 µm. It...
Smoltek holds unique world patents for technologies that make material engineering on an atomic level possible. Smoltek has solutions that allow continued miniaturization and increased performance of semiconductors, contribute to carbon-free steel production and renewable energy storage, and enable mind control of robotic prostheses. This is a story of how Smoltek came to be.
The present invention relates to a heat dissipator that includes a conductive substrate and a plurality of nanostructures supported by the conductive substrate. The nanostructures are at least partly embedded in an insulator. Each of the nanostructures includes a plurality of intermediate layers on the conductive substrate. At least two of the plurality of intermediate layers are interdiffused, and material of the at least two of the plurality of intermediate layers that are interdiffused is present in the nanostructure.
The invention: An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.