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The Multilayer Cap patent family introduces a MIM-capacitor device that can double or triple the capacitance density of Smoltek's CNF-MIM capacitors. The patent details an invention for a layered energy storage device, specifically a capacitor, built using a metal-insulator-metal (MIM) configuration.
S Kabir, A Johansson, A M Saleem, R Andersson, V Desmaris, O Tiverman, V Marknäs, M Bylund, K Lundahl • August 1, 2024
The invenÂtion: A MIM enerÂgy storÂage device comÂprisÂing a botÂtom elecÂtrode; a pluÂralÂiÂty of conÂducÂtive verÂtiÂcal nanosÂtrucÂtures; conÂforÂmalÂly coatÂing a botÂtom conÂducÂtive conÂtrol layÂer of each of the pluÂralÂiÂty of conÂducÂtive verÂtiÂcal nanosÂtrucÂtures; and a layÂered stack of alterÂnatÂing conÂducÂtive conÂtrol layÂers and elecÂtrode layÂers conÂforÂmalÂly coatÂing the botÂtom conÂducÂtive conÂtrol layÂer, the layÂered stack includÂing at least a first odd-numÂbered elecÂtrode layÂer at the botÂtom of the layÂered stack, a first odd-numÂbered conÂducÂtive conÂtrol layÂer directÂly on the first odd-numÂbered elecÂtrode layÂer, and a first even-numÂbered elecÂtrode layÂer directÂly on the first odd-numÂbered conÂducÂtive conÂtrol layÂer. Each even-numÂbered elecÂtrode layÂer in the layÂered stack is conÂducÂtiveÂly conÂnectÂed to the botÂtom elecÂtrode; and each odd-numÂbered elecÂtrode layÂer in the layÂered stack is conÂducÂtiveÂly conÂnectÂed to any othÂer odd-numÂbered elecÂtrode layÂer in the layÂered stack.
Patent Office | Patent |
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ChiÂna | CN115428107B |
USA | US12183520 |
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