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Multilayer Cap

The Multilayer Cap patent family introduces a MIM-capacitor device that can double or triple the capacitance density of Smoltek's CNF-MIM capacitors. The patent details an invention for a layered energy storage device, specifically a capacitor, built using a metal-insulator-metal (MIM) configuration.

S Kabir, A Johansson, A M Saleem, R Andersson, V Desmaris, O Tiverman, V Marknäs, M Bylund, K Lundahl • August 1, 2024

The inven­tion: A MIM ener­gy stor­age device com­pris­ing a bot­tom elec­trode; a plu­ral­i­ty of con­duc­tive ver­ti­cal nanos­truc­tures; con­for­mal­ly coat­ing a bot­tom con­duc­tive con­trol lay­er of each of the plu­ral­i­ty of con­duc­tive ver­ti­cal nanos­truc­tures; and a lay­ered stack of alter­nat­ing con­duc­tive con­trol lay­ers and elec­trode lay­ers con­for­mal­ly coat­ing the bot­tom con­duc­tive con­trol lay­er, the lay­ered stack includ­ing at least a first odd-num­bered elec­trode lay­er at the bot­tom of the lay­ered stack, a first odd-num­bered con­duc­tive con­trol lay­er direct­ly on the first odd-num­bered elec­trode lay­er, and a first even-num­bered elec­trode lay­er direct­ly on the first odd-num­bered con­duc­tive con­trol lay­er. Each even-num­bered elec­trode lay­er in the lay­ered stack is con­duc­tive­ly con­nect­ed to the bot­tom elec­trode; and each odd-num­bered elec­trode lay­er in the lay­ered stack is con­duc­tive­ly con­nect­ed to any oth­er odd-num­bered elec­trode lay­er in the lay­ered stack.

Granted patents relating to the innovation

Patent OfficePatent
Chi­naCN115428107B
USAUS12183520
For more infor­ma­tion about a par­tic­u­lar patent, click on its name to view it on Google Patents.

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