Sign up for our newsletter!
Your data will be handled in compliance with our privacy policy.
Your data will be handled in compliance with our privacy policy.
Research paper published in the proceedings of 2019 Electrical Design of Advanced Packaging and Systems (EDAPS), 2019, pp. 1-3. Award for best presentation.
S Krause, R Andersson, M Bylund, A M Saleem, S Kabir, V Desmaris • February 27, 2020
In this paper, we present the curÂrent state-of-the-art techÂnolÂoÂgy of solÂid-state capacÂiÂtors based on carÂbon nanofibers (CNFs). TakÂing advanÂtage of the large 3D surÂface feaÂtured by verÂtiÂcalÂly aligned and tightÂly spaced carÂbon nanofibers directÂly grown on the capacÂiÂtor’s elecÂtrode, capacÂiÂtance denÂsiÂties in excess of 650 nF/​mm2 have been achieved at a proÂfile height of only 7 μm, when employÂing medium‑k field dielecÂtric mateÂriÂals such as HfO2 and Al2O3 , to form the MIM-like capacÂiÂtors. The inteÂgratÂed capacÂiÂtors were fabÂriÂcatÂed on high-resisÂtive Si subÂstrate, while employÂing fulÂly CMOS comÂpatÂiÂble processÂes. For the devices with highÂest capacÂiÂtance denÂsiÂty, the leakÂage curÂrents are typÂiÂcalÂly below 0.01 nA/​nF at 1V, while susÂtainÂing voltÂages up to 6 V as well as very good temÂperÂaÂture and voltÂage staÂbilÂiÂty. For the largest devices, the equivÂaÂlent series resisÂtance (ESR) and inducÂtance (ESL) are as low as 60 mΩ and 6 pH, respecÂtiveÂly, as well as very good temÂperÂaÂture and voltÂage staÂbilÂiÂty. The results of the extenÂsive DC and RF charÂacÂterÂiÂzaÂtions strongÂly supÂport the potenÂtial for CNF-based solÂid-state capacÂiÂtors to comÂpete with estabÂlished high capacÂiÂtance denÂsiÂty techÂnoloÂgies and are suitÂable both in inteÂgratÂed on-chip soluÂtions as well as in disÂcrete elecÂtronÂic appliÂcaÂtions at a minÂiÂmal comÂpoÂnent volume.
Your data will be handled in compliance with our privacy policy.