Deposition and selective removal of conducting helplayer for nanostructure processing

A method for mak­ing one or more nanos­truc­tures is dis­closed, the method com­pris­ing: deposit­ing a con­duct­ing lay­er on an upper sur­face of a sub­strate; deposit­ing a pat­terned lay­er of cat­a­lyst on the con­duct­ing lay­er; grow­ing the one or more nanos­truc­tures on the lay­er of cat­a­lyst; and selec­tive­ly remov­ing the con­duct­ing lay­er between and around the one or more nanos­truc­tures. A device is also dis­closed, com­pris­ing a sub­strate, where­in the sub­strate com­pris­es one or more exposed met­al islands sep­a­rat­ed by one or more insu­lat­ing areas; a con­duct­ing helplay­er dis­posed on the sub­strate cov­er­ing at least some of the one or more exposed met­al islands or insu­lat­ing areas; a cat­a­lyst lay­er dis­posed on the con­duct­ing helplay­er; and one or more nanos­truc­tures dis­posed on the cat­a­lyst layer.

Granted patents relating to the innovation

Patent OfficePatent
Chi­naCN102007571
Chi­naCN105441903
EuropeEP2250661
IndiaIN327303
JapanJP5474835
JapanJP5943947
JapanJP6126725
South KoreaKR101638463
Tai­wanTWI465389
USAUS8508049
USAUS8866307
USAUS9114993
For more infor­ma­tion about a par­tic­u­lar patent, click on its name to view it on Google Patents.

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