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Ep2250661b1.pdf

Helplayer

The Helplayer family is covering a method to protect the underlaying substrate or materials from being damaged during the nanostructure growth process.

The inven­tion: A meth­od for mak­ing one or more nano­struc­tures is dis­closed, the meth­od com­pris­ing: depos­it­ing a con­duct­ing lay­er on an upper sur­face of a sub­strate; depos­it­ing a pat­terned lay­er of cata­lyst on the con­duct­ing lay­er; grow­ing the one or more nano­struc­tures on the lay­er of cata­lyst; and select­ively remov­ing the con­duct­ing lay­er between and around the one or more nano­struc­tures. A device is also dis­closed, com­pris­ing a sub­strate, wherein the sub­strate com­prises one or more exposed met­al islands sep­ar­ated by one or more insu­lat­ing areas; a con­duct­ing hel­play­er dis­posed on the sub­strate cov­er­ing at least some of the one or more exposed met­al islands or insu­lat­ing areas; a cata­lyst lay­er dis­posed on the con­duct­ing hel­play­er; and one or more nano­struc­tures dis­posed on the cata­lyst layer.

Granted patents relating to the innovation

Pat­ent OfficePat­ent
ChinaCN102007571
ChinaCN105441903
EuropeEP2250661
IndiaIN327303
JapanJP5474835
JapanJP5943947
JapanJP6126725
South KoreaKR101638463
TaiwanTWI465389
USAUS8508049
USAUS8866307
USAUS9114993
For more inform­a­tion about a par­tic­u­lar pat­ent, click on its name to view it on Google Patents.

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