Deposition and selective removal of conducting helplayer for nanostructure processing

A method for mak­ing one or more nanos­truc­tures is dis­closed, the method com­pris­ing: deposit­ing a con­duct­ing lay­er on an upper sur­face of a sub­strate; deposit­ing a pat­terned lay­er of cat­a­lyst on the con­duct­ing lay­er; grow­ing the one or more nanos­truc­tures on the lay­er of cat­a­lyst; and selec­tive­ly remov­ing the con­duct­ing lay­er between and around the one or more nanos­truc­tures. A device is also dis­closed, com­pris­ing a sub­strate, where­in the sub­strate com­pris­es one or more exposed met­al islands sep­a­rat­ed by one or more insu­lat­ing areas; a con­duct­ing helplay­er dis­posed on the sub­strate cov­er­ing at least some of the one or more exposed met­al islands or insu­lat­ing areas; a cat­a­lyst lay­er dis­posed on the con­duct­ing helplay­er; and one or more nanos­truc­tures dis­posed on the cat­a­lyst layer.

Granted patents relating to the innovation

Patent OfficePatent
South KoreaKR101638463
For more infor­ma­tion about a par­tic­u­lar patent, click on its name to view it on Google Patents.

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The invention: An interposer device comprising an interposer substrate; a plurality of conducting vias extending through the interposer substrate; a conductor pattern on the interposer substrate, and a nanostructure energy storage device. The nanostructure energy storage device comprises at least a first plurality of conductive nanostructures formed on the interposer substrate; a conduction controlling material embedding each nanostructure in the first plurality of conductive nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material, wherein the first electrode and the second electrode are configured to allow electrical connection of the nanostructure energy storage device to the integrated circuit.
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