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The Compact Energy Storage Interposer family is covering the invention and manufacturing of extremely thin energy storage devices embedded in an interposer.
The invention: An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures; a conduction controlling material embedding the nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material.
Patent Office | Patent |
---|---|
India | IN321032 |
South Korea | KR102059450 |
South Korea | KR102340123 |
USA | US10770390 |
USA | US10991652 |
Taiwan | I766072 |
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News
June 27, 2025
Smoltek Semi has cleared a significant milestone in the development of next-generation CNF-MIM capacitors. Samples from the latest prototype generation, fabricated with an advanced dielectric stack composed of zirconium oxide (ZrO₂) and aluminum oxide (Al₂O₃) have demonstrated exceptional stability under both temperature and voltage stress.
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June 18, 2025
Smoltek Semi has initiated the signing of a technical service agreement with the Taiwanese Industrial Technology Research Institute (ITRI) that enables low-volume production of Smoltek's propriety CNF-MIM capacitors.
IR Blog Posts
June 16, 2025
Smoltek Semi joins an elite club of companies achieving 1 µF/mm² capacitance density, but stands alone in reaching this milestone with an ultra-thin profile. This breakthrough unlocks the under-chip real estate that represents the holy grail of capacitor placement in modern electronics.
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Smoltek Semi has successfully engineered an advanced dielectric stack that surpasses 1 microfarad per Square millimeter capacitance milestone.