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Smoltek Semi has cleared a significant milestone in the development of next-generation CNF-MIM capacitors. Samples from the latest prototype generation, fabricated with an advanced dielectric stack composed of zirconium oxide (ZrO₂) and aluminum oxide (Al₂O₃) have demonstrated exceptional stability under both temperature and voltage stress.
“This is a breakthrough in our CNF-MIM performance. The combination of CNF electrodes with a ZrO₂/Al₂O₃ stack, not only leverages the proven reliability of DRAM-grade dielectrics but also delivers exceptional TCC and VCC characteristics that outperforms what’s currently offered by the ultra-thin MLCCs being used as landside decoupling capacitors in high-end processors”.
Farzan Ghavanini, CTO of Smoltek
Key Performance Highlights:
A Leap Forward in Smoltek’s CNF-MIM Technology
The advanced dielectric stack, composed of zirconium oxide (ZrO₂) and aluminum oxide (Al₂O₃), that Smotek Semi are using in the prototypes is the same stack used in the charge storage capacitor of most advanced DRAM technologies.
Read the official press release here: Smoltek Smoltek Achieves Industrial Standard in Thermal and Voltage Stability in CNF-MIM Capacitor Technology.
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May 15, 2026
Smoltek has been granted an additional patent within its Interposer patent family, further protecting the company’s CNF-MIM capacitor technology for advanced semiconductor packaging. With this European patent approval, the company has secured Interposer IP in all major global markets.
News
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Our CNF-MIM technology has demonstrated stable electrical performance after 2,000 hours in an independent life test conducted by a global capacitor manufacturer. This further strengthens confidence in the reliability of the technology and supports Smoltek's development of advanced capacitors for AI, RF and optoelectronics, among other applications.