Helplayer

The inven­tion: A method for mak­ing one or more nanos­truc­tures is dis­closed, the method com­pris­ing: deposit­ing a con­duct­ing lay­er on an upper sur­face of a sub­strate; deposit­ing a pat­terned lay­er of cat­a­lyst on the con­duct­ing lay­er; grow­ing the one or more nanos­truc­tures on the lay­er of cat­a­lyst; and selec­tive­ly remov­ing the con­duct­ing lay­er between and around the one or more nanos­truc­tures. A device is also dis­closed, com­pris­ing a sub­strate, where­in the sub­strate com­pris­es one or more exposed met­al islands sep­a­rat­ed by one or more insu­lat­ing areas; a con­duct­ing helplay­er dis­posed on the sub­strate cov­er­ing at least some of the one or more exposed met­al islands or insu­lat­ing areas; a cat­a­lyst lay­er dis­posed on the con­duct­ing helplay­er; and one or more nanos­truc­tures dis­posed on the cat­a­lyst layer.

Granted patents relating to the innovation

Patent Office	Patent
Chi­na	CN102007571
Chi­na	CN105441903
Europe	EP2250661
India	IN327303
Japan	JP5474835
Japan	JP5943947
Japan	JP6126725
South Korea	KR101638463
Tai­wan	TWI465389
USA	US8508049
USA	US8866307
USA	US9114993