Sign up for our newsletter!
Your data will be handled in compliance with our privacy policy.
Your data will be handled in compliance with our privacy policy.
The Helplayer family is covering a method to protect the underlaying substrate or materials from being damaged during the nanostructure growth process.
J Berg, V Desmaris, S Kabir, D Brud • February 20, 2009
The invenÂtion: A method for makÂing one or more nanosÂtrucÂtures is disÂclosed, the method comÂprisÂing: depositÂing a conÂductÂing layÂer on an upper surÂface of a subÂstrate; depositÂing a patÂterned layÂer of catÂaÂlyst on the conÂductÂing layÂer; growÂing the one or more nanosÂtrucÂtures on the layÂer of catÂaÂlyst; and selecÂtiveÂly removÂing the conÂductÂing layÂer between and around the one or more nanosÂtrucÂtures. A device is also disÂclosed, comÂprisÂing a subÂstrate, whereÂin the subÂstrate comÂprisÂes one or more exposed metÂal islands sepÂaÂratÂed by one or more insuÂlatÂing areas; a conÂductÂing helplayÂer disÂposed on the subÂstrate covÂerÂing at least some of the one or more exposed metÂal islands or insuÂlatÂing areas; a catÂaÂlyst layÂer disÂposed on the conÂductÂing helplayÂer; and one or more nanosÂtrucÂtures disÂposed on the catÂaÂlyst layer.
Patent Office | Patent |
---|---|
ChiÂna | CN102007571 |
ChiÂna | CN105441903 |
Europe | EP2250661 |
India | IN327303 |
Japan | JP5474835 |
Japan | JP5943947 |
Japan | JP6126725 |
South Korea | KR101638463 |
TaiÂwan | TWI465389 |
USA | US8508049 |
USA | US8866307 |
USA | US9114993 |
Your data will be handled in compliance with our privacy policy.