Helplayer

The invention: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

Granted patents relating to the innovation

Patent Office	Patent
China	CN102007571
China	CN105441903
Europe	EP2250661
India	IN327303
Japan	JP5474835
Japan	JP5943947
Japan	JP6126725
South Korea	KR101638463
Taiwan	TWI465389
USA	US8508049
USA	US8866307
USA	US9114993