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Smoltek Semi has cleared a significant milestone in the development of next-generation CNF-MIM capacitors. Samples from the latest prototype generation, fabricated with an advanced dielectric stack composed of zirconium oxide (ZrO₂) and aluminum oxide (Al₂O₃) have demonstrated exceptional stability under both temperature and voltage stress.
“This is a breakthrough in our CNF-MIM performance. The combination of CNF electrodes with a ZrO₂/Al₂O₃ stack, not only leverages the proven reliability of DRAM-grade dielectrics but also delivers exceptional TCC and VCC characteristics that outperforms what’s currently offered by the ultra-thin MLCCs being used as landside decoupling capacitors in high-end processors”.
Farzan Ghavanini, CTO of Smoltek
Key Performance Highlights:
A Leap Forward in Smoltek’s CNF-MIM Technology
The advanced dielectric stack, composed of zirconium oxide (ZrO₂) and aluminum oxide (Al₂O₃), that Smotek Semi are using in the prototypes is the same stack used in the charge storage capacitor of most advanced DRAM technologies.
Read the official press release here: Smoltek Smoltek Achieves Industrial Standard in Thermal and Voltage Stability in CNF-MIM Capacitor Technology.
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