Sign up for our newsletter!
Your data will be handled in compliance with our privacy policy.
Smoltek’s zirconia based dielectric stack passes preliminary 1,000-hour reliability test
We are pleased to announce that the new zirconia based dielectric stack, previously reported to show 230% improvement in capacitance density, has now passed the 1,000-hour DC life test, a preliminary reliability test, carried out by capacitor manufacturer Yageo.
December 18, 2024
In September, Smoltek Semi started testing its newly developed zirconia based dielectric stack for reliability. The evaluation has been carried out by Smoltek’s partner, Yageo, on specially designed test capacitors incorporating the new stack*.
We have now received the results after the 1,000-hour mark, which show zero failures and only very minor changes in key performance indicators of the capacitor, such as capacitance value and leakage current. These results are very encouraging and increase our confidence that the CNF-MIM capacitors fabricated using the same dielectric stack will also pass the reliability test.
DC life test is an important component of the full reliability test commonly implemented on capacitors.
Anders Lundgren, Project Manager at Smoltek Semi.
* The capacitors were subjected to a DC life test targeting 1,000 hours during which they were biased at 2.0V DC and were exposed to 85°C.
Sign up for our newsletter!
Your data will be handled in compliance with our privacy policy.
Related news and insights
IR Blog Posts
October 1, 2024
Why increased capacitance density matter
Smoltek Semi has developed a new material for use in CNF-MIM capacitors. The new material increases capacitance by more than three times and reduces leakage current by 50 percent. In this article, we examine what this means and why it is good for shareholders and investors.
IR Blog Posts
September 5, 2024
Why Smoltek doubles down on qualified research
Smoltek’s focus on qualified research places it firmly in the Explorer quadrant of the R&D Evaluation Matrix, a model for assessing a company’s research and development strategy. Discover why this matters to investors and how Smoltek translates groundbreaking research into valuable business opportunities.
News
August 12, 2024
Smoltek is seeking strong partners for industrialization of CNF-MIM capacitors
Smoltek's CNF-MIM technology offers a competitive alternative to silicon capacitors for ultra-thin high-performance capacitors used in processors for mobile phones and computers. The next-generation capacitors, Gen-One, is planned to be completed by the end of 2024, matching competitors in performance with an exceptionally thin form factor. The strategic objective is to pair up with a financially strong partner for the industrialization and commercialization of the capacitors.
IR Blog Posts
October 11, 2024
New method accelerates CNF-MIM development
Our innovative “zapping” method drastically reduces development time and costs, enabling us to advance CNF-MIM technology faster and making Smoltek Semi’s technology even more attractive to potential buyers. Read on to see how this new process strengthens our position and shortens our path to market.
IR Blog Posts
January 9, 2025
Deep Trench Capacitors (DTC) is a dead end – CNF-MIM is the way forward
Modern electronics demand increasingly compact and powerful capacitors, and the race for miniaturization has reached a critical juncture. While both Deep Trench Capacitors (DTC) and Carbon Nanofiber Metal-Insulator-Metal (CNF-MIM) capacitors are being developed for advanced applications requiring smaller size and higher capacitance density than conventional surface-mounted capacitors, DTC pushes the boundaries of what’s achievable with subtractive manufacturing, but is hitting fundamental physical limits. In contrast, Smoltek’s innovative CNF-MIM technology offers a revolutionary path forward, unrestricted by these constraints.
IR Blog Posts
June 16, 2025
Smoltek breaks the 1 µF/mm² barrier with ultra-thin profile
Smoltek Semi joins an elite club of companies achieving 1 µF/mm² capacitance density, but stands alone in reaching this milestone with an ultra-thin profile. This breakthrough unlocks the under-chip real estate that represents the holy grail of capacitor placement in modern electronics.