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Smoltek has been granted a new patent in the Discrete CNF-MIM patent family

Smoltek has been awarded a new patent in the Discrete CNF-MIM patent family. The protected innovation in this patent family discloses a discrete capacitor component based on our CNF-MIM technology. This also brings our IP portfolio to comprise 91 granted patents.

August 16, 2024

The new­ly approved US-patent is the fifth in order in the Dis­crete CNF-MIM patent fam­i­ly. This patent fam­i­ly dis­clos­es inno­va­tions that exploit the extra ordi­nary sur­face to vol­ume ratio pro­vid­ed by car­bon nanofibers and pro­pos­es a dis­crete Met­al-Insu­la­tor-Met­al (MIM) struc­ture with unpar­al­leled high capac­i­tance density.

This patent grant fur­ther strength­ens our IP port­fo­lio in the field of ultra-thin capac­i­tors, which is impor­tant for us as the semi­con­duc­tor indus­try invests aggres­sive­ly in advanced capac­i­tor tech­nolo­gies to match the demands of new­er inte­grat­ed circuits.

Farzan Gha­vani­ni, CTO at Smoltek

The Dis­crete CNF-MIM patent fam­i­ly dis­clos­es a high-den­si­ty dis­crete capac­i­tor based on Smoltek’s car­bon nanofiber tech­nol­o­gy paving the way for CNF based ultra-thin capac­i­tors that can be placed adja­cent to the com­po­nents they are sup­posed to sup­port. The patent fam­i­ly enables the sys­tem design­ers to bring for­ward inte­gra­tion and pack­ag­ing schemes with supe­ri­or per­for­mance with very small foot­print. These new schemes are vital in devel­op­ing new prod­ucts in the field of IoT, wear­ables, high-per­for­mance com­put­ing (HPC), Arti­fi­cial Intel­li­gence (AI), and similar.

Discrete CNF-MIM patent US20220013305a1

It is reward­ing to wit­ness that our R&D efforts as reflect­ed in our expand­ing IP port­fo­lio aligns well with the needs of the semi­con­duc­tor indus­try and that our dis­rup­tive tech­nol­o­gy can solve prob­lems that tra­di­tion­al tech­nolo­gies can­not, Farzan Gha­vani­ni concludes.

Smoltek’s patent port­fo­lio now glob­al­ly com­pris­es 91 grant­ed patents. Read more about our IP and patents.

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