Smoltek has received a new patent for improving the capacitance density of CNF-MIM capacitors

The patent is the first one in a new cat­e­go­ry called Mul­ti­lay­er Cap, and describes a method for cre­at­ing a lay­ered capac­i­tor using a met­al-insu­la­tor-met­al (MIM) struc­ture. This method involves stack­ing con­duc­tor-insu­la­tor lay­ers to enhance capac­i­tance den­si­ty, a key fea­ture of Smoltek’s CNF-MIM capac­i­tor technology.

Capac­i­tance den­si­ty is one of the most impor­tant KPIs of our CNF-MIM capac­i­tor tech­nol­o­gy. In this new patent, we pro­pose a tech­nique that dou­bles or triples the capac­i­tance den­si­ty through an inno­vat­ing mul­ti-lay­er structure.

Farzan Gha­vani­ni, CTO at Smoltek.

The patent dis­clos­es a dis­crete met­al-insu­la­tor-met­al (MIM) capac­i­tor com­po­nent based on the pro­pri­etary car­bon nanofiber tech­nol­o­gy devel­oped at Smoltek. It also describes the struc­ture of such capac­i­tor and the relat­ed micro­fab­ri­ca­tion process­es to real­ize it

The patent includes two main claims: one for the struc­ture of the capac­i­tor and anoth­er for the man­u­fac­tur­ing process. This inven­tion focus­es on improv­ing met­al-insu­la­tor-met­al (MIM) capac­i­tors and bat­ter­ies, includ­ing capac­i­tors and bat­ter­ies, through a new, inno­v­a­tive mul­ti-lay­er structure.

Smoltek’s patent port­fo­lio now glob­al­ly com­pris­es 90 grant­ed patents. Read more about our IP and patents.