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Smoltek is awarded a new patent – the first one of a new patent family called Discrete CNF-MIM. This innovation discloses a discrete capacitor component based on our CNF-MIM technology. This also brings our IP portfolio now to comprise 79 granted patents.
This is the first patent in the new patent family of discrete capacitor applications, and the innovation exploits the extra-ordinary surface to volume ratio provided by carbon nanofibers to create a MIM capacitor with unparalleled high capacitance density.
“With this new patent family Smoltek expands its IP portfolio to include the field of discrete capacitors – a field that we have been heavily investing in terms of R&D and innovation resources.”Farzan Ghavanini, CTO at Smoltek.
The patent discloses a discrete metal-insulator-metal (MIM) capacitor component based on the proprietary carbon nanofiber technology developed at Smoltek. It also describes the structure of such capacitor and the related microfabrication processes to realize it.
“This patent grant has arrived in perfect time as the semiconductor industry has started to investigate aggressively in advanced capacitor technologies to match the demands of newer integrated circuits. It is rewarding to witness that our R&D efforts as reflected in our expanding IP portfolio aligns well with the needs of the industry and that our disruptive technology can solve problems that traditional technologies cannot.”Farzan Ghavanini
The new Discrete CNF-MIM patent family discloses a high-density discrete capacitor based on Smoltek’s carbon nanofiber technology paving the way for ultra-thin capacitors that can be placed adjacent to the components they are supposed to support. The patent family enables the system designers to bring forward integration and packaging schemes with superior performance with very small footprint. These new schemes are vital in developing new products in the field of IoT, wearables, high-performance computing (HPC), and similar.
Smoltek’s patent portfolio now globally comprises 79 granted patents. Read more about our IP and patents.